High Voltage Transistor (NPN)
BTC4505N3
Features
High breakdown voltage. (BVceo =400V) Low saturation voltage, typically...
High Voltage
Transistor (
NPN)
BTC4505N3
Features
High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C
COMCHIP
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COLLECTOR
3 1
BASE
SOT-23
.119 (3.0) .110 (2.8)
2
EMITTER
.020 (0.5)
Top View
.056 (1.40) .047 (1.20)
.006 (0.15) .002 (0.05)
.037(0.95) .037(0.95)
.006 (0.15)max.
.020 (0.5)
.020 (0.5)
.103 (2.6) .086 (2.2)
Dimensions in inches (millimeters)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC Pd Tj Tstg
Limit
400 400 6 300 0.225 150 -55~+150
MDS0405003A
Page 1
.044 (1.10) .035 (0.90)
Unit
V V V mA W °C °C
High Voltage
Transistor (
NPN)
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 52 Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 Unit V V V µA nA µA V V MHz pF
COMCHIP
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Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=400V, IE=0 VCE=300V, REB=4kӨ VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank Range K 52~120 P 82~180 Q 120~270
MDS0405003A
Page 2
High Voltage
Transistor (
NPN)
Characteristic Curves
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