Document
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA225B series B
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA225BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500B 500 25 180 600B 600 25 180 800B 800 25 180 V A A
PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2 1 3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 91 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 25 -800 800 UNIT V A
-
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
190 209 180 100 2 5 5 0.5 150 125
A A A2s A/µs A V W W ˚C ˚C
over any 20 ms period
-40 -
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.100
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS
BTA225B series B
MIN. -
TYP. 55
MAX. 1.0 1.4 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance minimum footprint, FR4 board junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current
2
CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2+ G+ T2+ GT2- G-
MIN. 2 2 2 0.25 -
TYP. 18 21 34 31 34 30 31 1.2 0.7 0.4 0.1
MAX. 50 50 50 60 90 60 60 1.55 1.5 0.5
UNIT mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VD = 12 V; IGT = 0.1 A IT = 30 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 25 A; without snubber; gate open circuit ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. 1000 TYP. 4000 44 2 MAX. UNIT V/µs A/ms µs
2 Device does not trigger in the T2-, G+ quadrant. September 1997 2 Rev 1.100
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
BTA225B series B
40
Ptot / W
BTA140
Tmb(max) / C
85
30 25
IT(RMS) / A
BTA140 91 C
= 180 30
1
120 90 60
95
20
105
20
30
15 10
10
115
5
0 125 30
0
5
10
15 IT(RMS) / A
20
25
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
ITSM / A BTA225
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
IT(RMS) / A BTA140
1000
50
40
dI T /dt limit 100
30
20
IT T 10 10us I TSM time
10
Tj initial = 25 C max 100us 1ms T/s 10ms 100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
ITSM / A BTA140 IT 150 T ITSM time
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 91˚C.
VGT(Tj) VGT(25 C)
200
1.6 1.4 1.2 1 0.8
BT136
Tj initial = 25 C max 100
50
0.6
0
1
10 100 Number of cycles at 50Hz
1000
0.4 -50
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
BTA225B series B
3 2.5 2 1.5 1
IGT(Tj) IGT(25 C)
BTA216 T2+ G+ T2+ GT2- G-
80 70
IT / A Tj = 125 C Tj = 25 C
BTA140
60 Vo = 1.073 V
Rs = 0.015 ohms
typ
max
50 40 30 20
0.5 0 -50
10
0
50 Tj / C
100
.