Three quadrant triacs high commutation
Philips Semiconductors
Preliminary specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass pass...
Description
Philips Semiconductors
Preliminary specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA216X series C
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600C 600 16 140 800C 800 16 140 V A A BTA216X- 500C Repetitive peak off-state 500 voltages RMS on-state current 16 Non-repetitive peak on-state 140 current
PINNING - SOT186A
PIN 1 2 3 DESCRIPTION main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2 gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
-
140 150 98 100 2 5 5 0.5 150 125
A A A2s A/µs ...
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