Three quadrant triacs high commutation
Philips Semiconductors
Preliminary specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass pass...
Description
Philips Semiconductors
Preliminary specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA212B series C
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600C 600 12 95 800C 800 12 95 V A A BTA212B- 500C Repetitive peak off-state 500 voltages RMS on-state current 12 Non-repetitive peak on-state 95 current
PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2 1 3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
-
95 105 45 100 2 5 5...
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