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BTA208B-800E Dataheets PDF



Part Number BTA208B-800E
Manufacturers NXP
Logo NXP
Description Three quadrant triacs guaranteed commutation
Datasheet BTA208B-800E DatasheetBTA208B-800E Datasheet (PDF)

Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including mic.

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Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. BTA208B series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. 600D 600E 600F 600 8 65 MAX. UNIT 800E 800F 800 8 65 BTA208B500D BTA208B500E BTA208B500F Repetitive peak off-state 500 voltages RMS on-state current 8 Non-repetitive peak on-state 65 current VDRM IT(RMS) ITSM V A A PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 PIN CONFIGURATION mb SYMBOL T2 2 1 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 8 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 65 71 21 100 2 5 5 0.5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs. September 1997 1 Rev 1.000 Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS BTA208B series D, E and F MIN. - TYP. 55 MAX. 2.0 2.4 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance minimum footprint, FR4 board junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current 2 CONDITIONS BTA208BVD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A IT = 10 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C MIN. TYP. ...D MAX. ...E 10 10 10 12 18 12 12 1.65 1.5 0.5 ...F 25 25 25 30 45 30 30 1.65 UNIT 2 2 2 0.25 - 1.3 0.7 0.4 0.1 5 5 5 6 9 6 6 1.65 mA mA mA mA mA mA mA V V V mA IL Latching current IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS BTA208BVDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; dVcom/dt = 20v/µs; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs ...D 10 MIN. ...E 20 ...F 50 V/µs TYP. MAX. UNIT dIcom/dt 1.8 2.5 3.5 - - A/ms tgt - - - 2 - µs 2 Device does not trigger in the T2-, G+ quadrant. September 1997 2 Rev 1.000 Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max BTA208B series D, E and F 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.1. SOT404 : centre pin connected to mounting base. Notes 1. Epoxy meets UL94 V0 at 1/8". MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.2. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". September 1997 3 Rev 1.000 Philips Semiconductors Objective specification Three quadrant triacs guaranteed commutation DEFINITIONS Data sheet status Objective specification Product specification Limiting values BTA208B series D, E and F This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Wh.


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