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BTA208-600B Dataheets PDF



Part Number BTA208-600B
Manufacturers NXP
Logo NXP
Description 3Q Hi-Com Triac
Datasheet BTA208-600B DatasheetBTA208-600B Datasheet (PDF)

TO-220AB BTA208-600B 3Q Hi-Com Triac 11 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High commu.

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TO-220AB BTA208-600B 3Q Hi-Com Triac 11 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Less sensitive gate for very high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only 3. Applications • Electronic thermostats • General purpose motor controls • Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 65 A - - 8A 2 18 50 mA 2 21 50 mA Scan or click this QR code to view the latest information for this product NXP Semiconductors Symbol Parameter Conditions VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 Simplified outline mb BTA208-600B 3Q Hi-Com Triac Min Typ Max Unit 2 34 50 mA Graphic symbol T2 sym051 T1 G 123 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name BTA208-600B TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 BTA208-600B Product data sheet All information provided in this document is subject to legal disclaimers. 11 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 NXP Semiconductors BTA208-600B 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 ��C; current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I2t I2t for fusing tp = 10 ms; SIN dIT/dt rate of rise of on-state current IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs IGM peak gate current PGM peak gate power PG(AV) average gate power over any 20 ms period Tstg storage temperature Tj junction temperature 10 IT(RMS) (A) 8 003aaf581 102 °C 25 IT(RMS) (A) 20 Min Max Unit - 600 V - 8A - 65 A - 71 A - 21 A2s - 100 A/µs - 2A - 5W - 0.5 W -40 150 °C - 125 °C 003aaf617 6 15 4 10 25 0 - 50 0 50 100 150 Tmb (°C) 010- 2 10- 1 1 10 surge duration (s) Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values Fig. 2. f = 50 Hz; Tmb = 102 °C RMS on-state current as a function of surge duration; maximum values BTA208-600B Product data sheet All information provided in this document is subject to legal disclaimers. 11 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 13 NXP Semiconductors BTA208-600B 3Q Hi-Com Triac 12 Ptot (W) 10 8 6 conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 α α = 180° 120° 90° 60° 30° 003aaf618 101 Tmb(max) (°C) 105 109 113 4 117 2 121 0 02468 Fig. 3. α = conduction angle a = form factor = IT(RMS) / IT(AV) Total power dissipation as a function of RMS on-state current; maximum values 80 ITSM (A) 60 IT(RMS) (A) 125 10 003aaa968 40 IT ITSM 20 t 0 1 f = 50 Hz 10 1/f Tj(init) = 25 °C max 102 103 number of cycles Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA208-600B Product data sheet All information provided in this document is subject to legal disclaimers. 11 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 13 NXP Semiconductors 103 ITSM (A) 102 (1) BTA208-600B 3Q Hi-Com Triac 003aab121 IT ITSM t tp Tj(init) = 25 °C max 10 10- 2 tp ≤ 20 ms (1) dIT/dt limit 10- 1 1 10 tp (ms) Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values 102 BTA208-600B Product data sheet All information provided in this document is subject to legal disclaimers. 11 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 13 NXP Semiconductors BTA2.


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