Document
TO-220AB
BTA208-600B
3Q Hi-Com Triac
11 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
• 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Less sensitive gate for very high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only
3. Applications
• Electronic thermostats • General purpose motor controls • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
Min Typ Max Unit - - 600 V - - 65 A - - 8A
2 18 50 mA 2 21 50 mA
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Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main terminal 2
Simplified outline
mb
BTA208-600B
3Q Hi-Com Triac
Min Typ Max Unit 2 34 50 mA
Graphic symbol
T2 sym051
T1 G
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA208-600B
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
Version SOT78
BTA208-600B
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13
NXP Semiconductors
BTA208-600B
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 ��C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
10
IT(RMS) (A) 8
003aaf581
102 °C
25 IT(RMS)
(A)
20
Min Max Unit - 600 V - 8A
- 65 A
- 71 A
- 21 A2s - 100 A/µs - 2A - 5W - 0.5 W -40 150 °C - 125 °C
003aaf617
6 15
4 10
25
0 - 50 0
50 100 150 Tmb (°C)
010- 2
10- 1
1 10 surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
f = 50 Hz; Tmb = 102 °C
RMS on-state current as a function of surge duration; maximum values
BTA208-600B
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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NXP Semiconductors
BTA208-600B
3Q Hi-Com Triac
12 Ptot (W)
10
8
6
conduction angle
(degrees)
30 60 90 120 180
form factor
a
4 2.8 2.2 1.9 1.57
α
α = 180° 120° 90° 60°
30°
003aaf618 101 Tmb(max) (°C) 105
109
113
4 117
2 121
0 02468
Fig. 3.
α = conduction angle a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
80
ITSM (A)
60
IT(RMS) (A)
125 10
003aaa968
40
IT ITSM
20 t
0 1
f = 50 Hz
10
1/f Tj(init) = 25 °C max
102 103 number of cycles
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values
BTA208-600B
Product data sheet
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11 August 2014
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NXP Semiconductors
103
ITSM (A)
102
(1)
BTA208-600B
3Q Hi-Com Triac
003aab121
IT ITSM
t tp Tj(init) = 25 °C max
10 10- 2
tp ≤ 20 ms (1) dIT/dt limit
10- 1
1
10 tp (ms)
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
102
BTA208-600B
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 13
NXP Semiconductors
BTA2.