Thyristors sensitive gate
Philips Semiconductors
Product specification
Thyristors sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive...
Description
Philips Semiconductors
Product specification
Thyristors sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications.
BTA151 series
QUICK REFERENCE DATA
SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BTA151Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 7.5 12 100 650R 650 7.5 12 100 800R 800 7.5 12 100 V A A A
PINNING - SOT82
PIN 1 2 3 tab DESCRIPTION cathode anode gate anode
PIN CONFIGURATION
SYMBOL
a
k
1
2
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb ≤ 109 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 MAX. -500R -650R -800R 5001 6501 800 7.5 12 100 110 50 50 2 5 12 5 0.5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C
VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current
I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperatur...
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