MRF19045R3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19045/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier applications. Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9.5 Watts Avg. Power Gain — 14.9 dB Efficiency — 23.5% Adjacent Channel Power — 885 kHz: –50 dBc @ 30 kHz BW IM3 — –37 dBc 100% Tested Under 2–Carrier N–CDMA Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF19045R3 MRF19045SR3 1990 MHz, 45 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 NI–400 MRF19045R3 CASE 465F–03, STYLE 1 NI–400S MRF19045SR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 105 0.60 –65 to +200 200 Uni...