NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
NPN Silicon AF Transistors
BC 337 BC 338
High current gain q High collector current q Low collector-emitter saturation...
NPN Silicon AF
Transistors
BC 337 BC 338
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (
PNP)
q 2 1 3
Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40
Marking –
Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3
Pin Configuration 1 2 3 C B E
Package1) TO-92
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 337 BC 338
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BC 337 45 50 5
BC 338 25 30 800 1 100 200 625 150
Unit V
mA A mA mW ˚C
– 65 … + 150
200 135
K/W
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BC 337 BC 338
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 337 BC 338 Collector-base breakdown voltage IC = 100 µA BC 337 BC 338 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C...
