NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
BC 846S
NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collecto...
BC 846S
NPN Silicon AF
Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated
Transistors with high matching in one package
4 5 6
2 1
3
VPS05604
Type BC 846S
Marking Ordering Code 1Ds Q62702-C2529
Pin Configuration 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1
Package SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Symbol Value 65 80 80 6 100 200 250 150 - 65...+150 mW °C mA Unit V
VCEO VCBO VCES VEBO IC I CM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction - soldering point
RthJA RthJS
≤275 ≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Ma 1998-11-01 -12-1998
BC 846S
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics per
Transistor Collector-emitter breakdown voltage typ. max. 15 5
Unit
V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO I CBO I CBO hFE
65 80 80 6 -
V
I C = 10 mA, I B = 0
Collector-base breakdown voltage
I C = 10 µA, IB = 0
Collector-emitter breakdown voltage
I C = 10 µA, VBE = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0
Collector cutoff current
nA µA -
VCB = 30 V, I...
