NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
NPN Silicon Darlington Transistors
BCP 29 BCP 49
For general AF applications q High collector current q High current g...
NPN Silicon Darlington
Transistors
BCP 29 BCP 49
For general AF applications q High collector current q High current gain q Complementary types: BCP 28/48 (
PNP)
q
Type BCP 29 BCP 49
Marking BCP 29 BCP 49
Ordering Code (tape and reel) Q62702-C2136 Q62702-C2137
Pin Configuration
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
1) 2)
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BCP 49 BCP 29 30 40 10 60 80 10 500 800 100 200 1.5 150 – 65 … + 150
Unit V
mA
W ˚C
Rth JA Rth JS
≤ ≤
75 17
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCP 29 BCP 49
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BCP 29 BCP 49 Collector-base breakdown voltage IC = 100 µA, IB = 0 BCP 29 BCP 49 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C VCB = 60 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, V...