PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)
PNP Silicon AF Transistors
BCW 61 BCX 71
q q q q q
For AF input stages and driver applications High current gain Low ...
PNP Silicon AF
Transistors
BCW 61 BCX 71
q q q q q
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (
NPN)
Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX 71G BCX 71H BCX 71J BCX 71 K
Marking BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs
Ordering Code (tape and reel) Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 Q62702-C1586 Q62702-C1554 Q62702-C1654
Pin Configuration 1 2 3 B E C
Package1) SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 61 BCX 71
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol BCW 61 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32
Values BCW 61 FF BCX 71 32 32 5 100 200 200 330 150 – 65 … + 150 45 45
Unit V
mA
mW ˚C
310 240
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCW 61 BCX 71
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 61, BCW 61 FF BCX 71 Collector-base breakdown volt...