Q62702-C1890

PNP Silicon AF Transistors BCW 61 BCX 71 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN) Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX 71G BCX 71H BCX 71J BCX 71 K Marking BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs Ordering Code (tape and reel) Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 Q62702-C1586 Q62702-C1554 Q62702-C1654 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 61 BCX 71 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCW 61 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 61 FF BCX 71 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 61 BCX 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 61, BCW 61 FF BCX 71 Collector-base breakdown volt...