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Q62702-C1866 Dataheets PDF



Part Number Q62702-C1866
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon AF Transistors (For general AF applications High collector current)
Datasheet Q62702-C1866 DatasheetQ62702-C1866 Datasheet (PDF)

NPN Silicon AF Transistors q q q q q BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 (PNP) Type BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Marking – CB CC CD Ordering Code (tape and reel) Q62702-C1572 Q62702-C1864 Q62702-C1865 Q62702-C1866 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current P.

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NPN Silicon AF Transistors q q q q q BCX 68 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 (PNP) Type BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 Marking – CB CC CD Ordering Code (tape and reel) Q62702-C1572 Q62702-C1864 Q62702-C1865 Q62702-C1866 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 20 25 5 1 2 100 200 1 150 – 65 … + 150 Unit V A mA W ˚C 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCX 68 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter cutoff current VEB = 5 V DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz fT – 100 – MHz VCEsat VBE – – 0.6 – – 1 V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 – – IEB0 hFE 50 85 85 100 160 60 – – – 100 160 250 – – – 375 160 250 375 – 0.5 V – – – – 100 100 10 nA µA µA Values typ. max. Unit 20 25 5 – – – – – – V – 1) Pulse test: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BCX 68 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 1 V Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 BCX 68 DC current gain hFE = f (IC) VCE = 1 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Collector cutoff current ICB0 = f (TA) VCB = 25 V Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Semiconductor Group 4 .


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