NPN Silicon AF Transistors
q q q q q
BCX 68
For general AF applications High collector current High current gain Low c...
NPN Silicon AF
Transistors
q q q q q
BCX 68
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 69 (
PNP)
Type BCX 68 BCX 68-10 BCX 68-16 BCX 68-25
Marking – CB CC CD
Ordering Code (tape and reel) Q62702-C1572 Q62702-C1864 Q62702-C1865 Q62702-C1866
Pin Configuration 1 2 3 B C E
Package1) SOT-89
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 20 25 5 1 2 100 200 1 150 – 65 … + 150
Unit V
A mA W ˚C
75 20
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCX 68
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter cutoff current VEB = 5 V DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V BCX 68 BCX 68-10 BCX 68-16 BCX 68-25 IC = 1 A, VCE = 1 V Collector-emitter saturation ...
