Document
PNP Silicon AF Transistors
BC 856 ... BC 860
Features
q q q q q
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN)
Type BC 856 A BC 856 B BC 857 A BC 857 B BC 857 C BC 858 A BC 858 B BC 858 C BC 859 A BC 859 B BC 859 C BC 860 B BC 860 C
Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs
Ordering Code (tape and reel) Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 Q62702-C1761 Q62702-C1888 Q62702-C1889
Pin Configuration 1 2 3 B E C
Package1) SOT-23
1)For
detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BC 856 ... BC 860
Maximum Ratings Parameter Symbol BC 856 Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
≤ ≤
Values BC 857 BC 860 45 50 50 5 100 200 200 200 330 150
Unit BC 858 BC 859 30 30 30 5 mA V
VCE0 VCB0 VCES VEB0 IC ICM IBM IEM Ptot Tj Tstg
65 80 80 5
mW ˚C
– 65 … + 150
310 240
K/W
1)Package
mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BC 856 ... BC 860
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 856 BC 857, BC 860 BC 858, BC 859 Collector-base breakdown voltage IC = 10 µA BC 856 BC 857, BC 860 BC 858, BC 859 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 856 BC 857, BC 860 BC 858, BC 859 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C DC current gain IC = 10 µA, VCE = 5 V BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C IC = 2 mA, VCE = 5 V BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1)Pulse
Values typ. max.
Unit
V(BR)CE0 65 45 30 V(BR)CB0 80 50 30 V(BR)CES 80 50 30 V(BR)EB0 ICB0 – – hFE – – – 125 220 420 VCEsat – – VBEsat – – VBE(on) 600 – 650 – 750 820 700 850 – – 75 250 300 650 140 250 480 180 290 520 – – – 250 475 800 1 – 15 4 5 – – – – – – – – – – – – – – – – – – – –
V
nA µA –
mV
test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
BC 856 ... BC 860
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VCB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 A … BC 859 A BC 856 B … BC 860 B BC 857 C … BC 860 C Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 30 Hz … 15 kHz BC 859 BC 860 BC 859 f = 1 kHz, ∆ f = 200 Hz BC 860 Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz … 50 Hz BC 860
Semiconductor Group 4
Values typ. max.
Unit
fT Cobo Cibo h11e
– – –
250 3 8
– – –
MHz pF
kΩ – – – 2.7 4.5 8.7 – – – 10– 4 – – – 1.5 2.0 3.0 – – – – – – – 200 330 600 – – –
µS
h12e
h21e
h22e – – – F – – – – Vn – 1.2 1.0 1.0 1.0 – 4 3 4 4 0.110 18 30 60 – – –
dB
µV
BC 856 ... BC 860
Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0)
Permissible pulse load Ptot max/Ptot DC = f (tp)
Transition frequency fT = f (IC) VCE = 5 V
Semiconductor Group
5
BC 856 ... BC 860
Collector cutoff current ICB0 = f (TA) VCB = 30 V
Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20
DC current gain hFE = f (IC) VCE = 5 V
Base-emitter saturation voltage IC = f (VBEsat), hFE = 20
Semiconductor Group
6
BC 856 ... BC 860
h parameter he = f (IC) normalized VCE = 5 V
h parameter he = f (VCE) normalized IC = 2 mA
Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz
Noise figure F = f (f) IC = 0.2 mA, RS = 2 kΩ, VCE = 5 V
Semiconductor Group
7
BC 856 ... BC 860
Noise figure F = f (IC) VCE = 5 V, f = 120 Hz
Noise figure F = f (IC) VCE = 5 V, f = 1 kHz
Noise figure F = f (IC) VCE = 5 V, f = 10 kHz
Semiconductor Group
8
.