PNP Silicon AF Transistors
BCW 67 BCW 68
For general AF applications q High current gain q Low collector-emitter satur...
PNP Silicon AF
Transistors
BCW 67 BCW 68
For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (
NPN)
q
Type BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H
Marking DAs DBs DCs DFs DGs DHs
Ordering Code (tape and reel) Q62702-C1560 Q62702-C1480 Q62702-C1681 Q62702-C1893 Q62702-C1322 Q62702-C1555
Pin Configuration 1 2 3 B E C
Package1) SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 67 BCW 68
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol BCW 67 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 45 5
Values BCW 68 45 60 5 800 1 100 200 330 150 – 65 … + 150
Unit V
mA A mA mW ˚C
285 215
K/W
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BCW 67 BCW 68
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 67 BCW 68 Collector-base breakdown voltage IC = 10 µA BCW 67 BCW 68 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA =...
