Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners)
Silicon Variable Capacitance Diode
BB 639
q
For tuning of extended frequency bands in VHF TV/VTR tuners
Type
Orderi...
Description
Silicon Variable Capacitance Diode
BB 639
q
For tuning of extended frequency bands in VHF TV/VTR tuners
Type
Ordering Code (tape and reel) Q62702-B586
Pin Configuration 1 2 C A
Marking
Package
BB 639
yellow S
SOD-323
Maximum Ratings Parameter Reverse voltage Reverse voltage (R ≥ 5 kΩ) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values 30 35 20 – 55 … + 150 – 55 … + 150 Unit V V mA °C °C
VR VRM IF Top Tstg
RthJA
≤ 450
K/W
Semiconductor Group
1
10.94
BB 639
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V … 28 V, f = 1 MHz Series resistance CT = 12 pF, f = 100 MHz Series inductance Value typ. max. Unit
IR
– – – – 38.3 2.6 14.7 – 0.65 2 10 200
nA
CT
36 2.4 42 2.9
pF
CT1/CT28
13.5 ∆CT/CT – 2.5 –
– % Ω – – – nH –
rS LS
Semiconductor Group
2
BB 639
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
3
...
Similar Datasheet