Silicon Variable Capacitance Diode (For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio)
BB 814
Silicon Variable Capacitance Diode
q q q q
BB 814
For FM radio tuners with extended frequency band High tuning...
Description
BB 814
Silicon Variable Capacitance Diode
q q q q
BB 814
For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking Coded capacitance groups and group matching available
Type BB 814
Ordering Code Pin Configuration (tape and reel) Q62702-B404
Marking SH (see Characteristics for marking of capacitance subgroups)
Package SOT-23
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
≤
Symbol VR VRM IF Top Tstg
Values 18 20 50 – 55 … + 150
Unit V mA
– 55 … + 125 ˚C
600
K/W
Semiconductor Group
1
10.94
BB 814
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 60 ˚C Diode capacitance f = 1 MHz1) VR = 2 V VR = 8 V Capacitance ratio VR = 2 V, 8 V, f = 1 MHz Capacitance matching VR = 2 V, 8 V Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz
1)
Values typ. max.
Unit
IR – – CT 43 19.1 CT2 CT8 ∆CT C T rS Q 2.05 – – – 44.75 20.8 2.15 – 0.18 200 46.5 22.7 2.25 3 – – – – 20 200
nA
pF
– % Ω –
Capacitance groups, coded 1, 2 CT (2 V) 43 44.5 … 45 … 46.5 CT (8 V) Unit pF
Code 1 2
19.1 … 21.95 pF 19.75 … 22.7
Semiconductor Group
2
BB 814
Diode capacitance CT = f (VR) per diode, f = 1 MHz
Capacita...
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