Document
BBY 55-03W
Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • Very low capacitance spread
2
1
VPS05176
Type BBY 55-03W
Marking Ordering Code 7 white Q62702-B0911
Pin Configuration 1=C 2=A
Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 16 20 -55 ...+150 -55 ...+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Apr-30-1998 1998-11-01
BBY 55-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 3 100 nA Unit
IR IR
-
VR = 15 V
Reverse current
VR = 15 V, TA = 65 °C
AC characteristics Diode capacitance
CT
14 10 5.5 15 11 6 2.5 0.15 0.09 0.6 16 12 6.5 3 0.35 -
pF
VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz
Capacitance ratio
CT2/CT10 rs CC Ls
2 -
Ω pF nH
VR = 2 V, VR = 10 V, f = 1 MHz
Series resistance
VR = 5 V, f = 470 MHz
Case capacitance
f = 1 MHz
Series inductance
Semiconductor Group Semiconductor Group
22
Apr-30-1998 1998-11-01
BBY 55-03W
Diode capacitance CT = f (V R) f = 1MHz
30 pF
24
CT
22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12
V VR
15
Semiconductor Group Semiconductor Group
33
Apr-30-1998 1998-11-01
.