Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
BBY 53-02W
Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage ope...
Description
BBY 53-02W
Silicon Tuning Diode Preliminary data High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO’s in mobile communications equipment High ratio at low reverse voltage
2
1
VES05991
Type BBY 53-02W
Marking L
Ordering Code Q62702-B0862
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 6 20 -55 ...+150 -55 ...+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Au 1998-11-01 -20-1998
BBY 53-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200
Unit
IR IR
-
nA
VR = 4 V
Reverse current
VR = 4 V, TA = 65 °C
AC characteristics Diode capacitance
CT
4.8 1.85 1.8 5.3 2.4 2.2 0.37 0.12 1.8 5.8 3.1 2.6 -
pF
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Capacitance ratio
CT1/C T3 rs CC Ls
Ω pF nH
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Au 1998-11-01 -20-1998
BBY 53-02W
Diode capacitance CT = f (V R) f = 1MHz
6
pF
CT
4
3
2
1
0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
V
3.0
VR
Semiconductor Group Semiconductor Group
33
Au 1998-11-01 -20-1998
...
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