Document
BBY 53-03W Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage
Type BBY 53-03W
Marking Ordering Code white/5 Q62702-B0825
Pin Configuration 1=C 2=A
Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 6 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C
VR IF Top Tstg
Semiconductor Group
1
Sep-11-1996
BBY 53-03W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
10 200
nA
VR = 4 V, TA = 25 °C VR = 4 V, TA = 65 °C
AC characteristics Diode capacitance
CT
4.8 1.85 5.3 2.4 2.2 0.37 0.12 2 5.8 3.1
pF
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Capacitance ratio
CT1/CT3
1.8 2.6
Ω pF nH -
VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance
rs CC Ls
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group
2
Sep-11-1996
BBY 53-03W
Diode capacitance CT = f (VR) f = 1MHz
6
pF
CT
4
3
2
1
0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
V VR
3.0
Package
Semiconductor Group
3
Sep-11-1996
.