Q62702-A919

Silicon Low Leakage Diode Low-leakage applications q Medium speed switching times q Single diode q BAS 116 Type BAS 116 Marking JVs Ordering Code (tape and reel) Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 54 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 75 85 250 4.5 370 150 – 65 … + 150 Unit V mA A mW ˚C 330 260 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAS 116 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 75 V VR = 75 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – 2 0.5 – 3 pF µs Values typ. max. Unit V(BR) VF 75 – – V mV – – – – IR – – – – – – – – 900 1000 1100 1250 nA 5 80 Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 BAS 116 Forward current IF = f (T...