Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
Silicon Switching Diodes
BAS 79 A … BAS 79 D
Switching applications q High breakdown voltage q Common cathode
q
Type ...
Description
Silicon Switching Diodes
BAS 79 A … BAS 79 D
Switching applications q High breakdown voltage q Common cathode
q
Type BAS 79 A BAS 79 B BAS 79 C BAS 79 D
Marking BAS 79 A BAS 79 B BAS 79 C BAS 79 D
Ordering Code (tape and reel) Q62702-A914 Q62702-A915 Q62702-A916 Q62702-A917
Pin Configuration
Package1) SOT-223
Maximum Ratings Parameter Symbol BAS 79 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 114 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
1) 2)
Values BAS BAS 79 B 79 C 100 100 1 1 10 1.2 150 – 65 … + 150 200 200
Unit BAS 79 D 400 400 A V
VR VRM IF IFM IFS Ptot Tj Tstg
50 50
W ˚C
Rth JA Rth JS
≤ ≤
170 30
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BAS 79 A … BAS 79 D
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 79 A BAS 79 B BAS 79 C BAS 79 D VF – – IR – – – – 1 50 – – 1.6 2
µA
Values typ. max.
Unit
V 50 100 200 400 – – – – – – – –
Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VR max VR = VR max, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA Test circuit for rever...
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