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Q62702-A712 Dataheets PDF



Part Number Q62702-A712
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)
Datasheet Q62702-A712 DatasheetQ62702-A712 Datasheet (PDF)

Silicon Switching Diode Array q BAW 101 Electrically insulated high-voltage medium-speed diodes Type BAW 101 Marking JPs Ordering Code (tape and reel) Q62702-A712 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS ≤ 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth .

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Silicon Switching Diode Array q BAW 101 Electrically insulated high-voltage medium-speed diodes Type BAW 101 Marking JPs Ordering Code (tape and reel) Q62702-A712 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS ≤ 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFM IFS Ptot Tj Tstg Values 300 300 250 500 4.5 350 150 – 65 … + 150 Unit V mA A mW ˚C 470 330 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 101 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current VR = 250 V VR = 250 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – 6 1 – – pF µs Values typ. max. Unit V(BR) VF IR 300 – – – – 1.3 V – – – – 150 50 nA µA Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 BAW 101 Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 ˚C Reverse current IR = f (TA) Semiconductor Group 3 .


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