Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching)
Silicon Dual Schottky Diode
BAT 15-04
q q q
DBS mixer applications to 12 GHz Low noise figure Low barrier type
Type
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Silicon Dual
Schottky Diode
BAT 15-04
q q q
DBS mixer applications to 12 GHz Low noise figure Low barrier type
Type
Ordering Code (tape and reel) Q62702-A504
Pin Configuration Marking 1 2 3 A – C S8
Package
BAT 15-04
SOT-23
Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS ≤ 55 °C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 4 110 100 – 55 … + 150 – 55 … + 150 Unit V mA mW °C °C
VR IF Ptot Top Tstg
Rth JA Rth JS
≤ 1090 ≤ 930
K/W K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10 94
BAT 15-04
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 5 µ A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching Value typ. max. Unit
V(BR)
4 – 0.23 0.32 – – 5.5 –
V V – – – 4 mV – 20 pF – 0.35 Ω – –
VF
∆VF CT RF
IF = 10 mA
Diode capacitance VR = 0 V, f = 1 MHz Forward resistance IF = 10 mA / 50 mA
Package Outline SOT-23
Semiconductor Group
2
BAT 15-04
Forward current IF = f (VF)
Reverse current IR = f (VR)
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
3
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