Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)
BAV 99S
Silicon Switching Diode Array • For high-speed switching applications • Connected in series • Internal (galvanic...
Description
BAV 99S
Silicon Switching Diode Array For high-speed switching applications Connected in series Internal (galvanic) isolated Diodes in one package
4 5 6
2 1
3
VPS05604
Type BAV 99S
Marking Ordering Code A7s Q62702-A1277
Pin Configuration
Package
1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 85 °C Junction temperature Storage temperature Symbol Value 70 70 200 4.5 250 150 65 ...+150 mA A mW °C Unit V
VR VRM IF I FS Ptot Tj T stg
Thermal Resistance Junction - ambient
1)
RthJA RthJS
≤ 530 ≤ 260
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11
Apr-27-1998 1998-11-01
BAV 99S
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. -
Unit
V(BR) VF
70
V mV
I (BR) = 100 µA
Forward voltage
I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA
Reverse current
-
-
715 855 1000 1250 2.5 µA nA
IR IR
-
VR = 70 V
Reverse current
VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C
AC characteristics Diode capacitance
-
-
30 50
CD t rr
-
-
1.5 6
pF ns
VR = 0 V, f = 1 MHz
Reverse recovery time
I F = 10 mA, I R = 10 mA, R L = 100 Ω,
measured at IR = 1mA
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
EHN00019
Pulse generator: tp = ...
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