Q62702-A1244

SMBTA 92M PNP Silicon High-Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA 42M (NPN) 4 5 3 2 1 VPW05980 Type SMBTA 92M Marking Ordering Code Pin Configuration s2D Q62702-A1244 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, T S ≤ 83 °C Junction temperature Storage temperature Symbol Value 300 300 5 500 100 1.5 150 - 65...+150 W °C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj T stg Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS ≤100 ≤45 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Mar-13-1998 1998-11-01 SMBTA 92M Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit max. 250 20 100 nA µA nA V min. DC characteristics Collector-emitter breakdown voltage typ. - V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I EBO hFE 300 300 5 - I C = 100 µA, IB = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 200 V, I E = 0 Collector-base cutoff current VCB = 200 V, T A = 150 °C Emitter cutoff current VEB = 3 V, I C = 0 DC current gain 1) I C = 1 mA, V CE = 10 V I C = 10 mA, VCE = 10 V I C = 30 mA, VCE = 10 V Collector-emitter saturation volta...