Q62702-A1202

SMBT 3906S PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN) 4 5 6 2 1 3 VPS05604 Type SMBT 3906S Marking Ordering Code s2A Q62702-A1202 Pin Configuration Package 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 40 40 6 200 250 150 - 65...+150 mA mW °C Unit V VCEO VCBO VEBO IC Ptot Tj Tstg RthJA RthJS ≤275 ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 SMBT 3906S Electrical Characteristics at TA =25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 50 Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE 40 40 5 - V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 30 V, I E = 0 DC current gain 1) nA - I C = 100 µA, V CE = 1 V I C = 1 mA, V CE = 1 V I C = 10 mA, VCE = 1 V I C = 50 mA, VCE = 1 V I C = 100 mA, V CE = 1 V Collector-emitter saturation volta...