Q62702-A1200

BAT 68-07W Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 68-07W Marking Ordering Code 87 Q62702-A1200 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 89 °C Junction temperature Operating temperature range Storage temperature Maximum Ratings Junction - ambient 1) Symbol Value 8 130 150 150 -65...+150 - 65 ...+150 Unit V mA mW °C °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 570 ≤ 410 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 17.6mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-09-1998 1998-11-01 BAT 68-07W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. max. 0.1 1.2 V µA nA mV 340 318 390 340 500 Unit V(BR) IR IR VF 8 - I (BR) = 10 µA Reverse current VR = 1 V Reverse current VR = 1 V, TA = 60 °C Forward voltage I F = 1 mA I F = 10 mA AC characteristics Diode capacitance CT rf - - 1 10 pF Ω VR = 1 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAT 68-07W Forward current IF = f (TA*;TS) * Package mounted on alumina 140 mA 120 110 100 TS TA IF 90 80 70 60 50 40 ...