Q62702-A120

Silicon PIN Diodes BAR 60 BAR 61 q q RF switch RF attenuator for frequencies above 10 MHz Type BAR 60 Marking 60 Ordering Code (tape and reel) Q62702-A786 Pin Configuration Package1) SOT-143 BAR 61 61 Q62702-A120 Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS ≤ 65 ˚C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 1) 2) Symbol VR IF Ptot Tj Tstg Top Values 100 140 250 150 – 55 … + 150 – 55 … + 150 Unit V mA mW ˚C Rth JA Rth JS ≤ ≤ 580 340 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAR 60 BAR 61 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC/AC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz Zero bias conductance VR = 0, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Differential forward resistance f = 100 MHz, IF = 0.01 mA IF = 0.1 mA IF = 1.0 mA IF = 10 mA IR – – VF CT – – gp τL Values typ. max. Unit – – – 100 1 1.25 nA µA V pF – 0.25 0.2 50 1 0.5 – – – µS µs – – rf – – – – 2800 380 45 7 – – – – Ω Semiconductor Group 2 BAR 60 BAR 61 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Forward resistan...