BAT 14-03W Silicon Schottky Diode
• DBS mixer application to 12GHz • Medium barrier type • Low capacitance
ESD: Electro...
BAT 14-03W Silicon
Schottky Diode
DBS mixer application to 12GHz Medium barrier type Low capacitance
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q62702-A1103 Pin Configuration 1=A 2=C Package SOD-323 BAT 14-03W O/white Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Total power dissipation Thermal Resistance Junction ambient
1)
Symbol
Values 4 90 - 55 ... + 150 100
Unit V mA
VR IF Top Tstg TS ≤ 85°C Ptot
≤ 450 ≤ 690
- 55 ... + 125 °C mW
RthJA RthJS
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Mar-01-1996
BAT 14-03W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit
V(BR)
4 0.43 0.55 0.22 5.5 0.52 0.66
V
I(BR) = 5 µA
Forward voltage
VF
0.36 0.48
IF = 1 mA IF = 10 mA
Diode capacitance
CT
0.35
pF Ω -
VR = 0 , f = 1 MHz
Differential forward resistance
RF
IF 10mA/ 50 mA
Diode capacitance CT = f (VR) f = 1MHz
0.50 pF
CT
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V VR
5.0
Semiconductor Group
2
Mar-01-1996
BAT 14-03W
Forward current IF = f (VF)
Reverse current IR = f (VR)
10 2 mA
10 1 mA
IF
10 1
IR
10 0
TA=125°C
TA=85°C
10 0 -40°C 25°C 85°C 125°C 10 -1 10 -2 10 -1
TA=25°C
10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0...