Silicon Switching Diode Array (For high speed switching applications Common cathode)
BAV 70W Silicon Switching Diode Array
• For high speed switching applications • Common cathode
Type BAV 70W
Marking Or...
Description
BAV 70W Silicon Switching Diode Array
For high speed switching applications Common cathode
Type BAV 70W
Marking Ordering Code A4s Q62702-A1030
Pin Configuration 1 = A1 2 = A2
Package 3 = C1/C2 SOT-323
Maximum Ratings per Diode Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total Power dissipation Symbol Values 70 70 200 4.5 250 mA A mW 150 - 65 ... + 150 ≤ 460 ≤ 190 °C Unit V
VR VRM IF IFS Ptot Tj Tstg RthJA RthJS
TS = 103 °C
Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Nov-28-1996
BAV 70W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage Values typ. max. Unit
V(BR)
70 -
V mV 715 855 1000 1250 µA 2.5 30 50
I(BR) = 100 µA
Forward voltage
VF
IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA
Reverse current
IR
VR = 70 V, TA = 25 °C VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C
AC characteristics per Diode Diode capacitance
CD
1.5
pF ns 6
VR = 0 V, f = 1 MHz
Reverse recovery time
trr
IF = 10 mA, IR = 10 mA, RL = 100 Ω trr measured at 1 mA
Semiconductor Group
2
Nov-28-1996
BAV 70W
Forward current IF = f (TA*;TS) * Package mounted on epoxy
Forward current IF = f (VF) TA = 25°C
300
mA
IF
200
TA
150
TS
100
50
0 0 20 40 60 80 100 120 s tp 160
Permissible Puls...
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