Q62702-A1028

BAT 62-02W Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies 2 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-02W Marking Ordering Code L Q62702-A1028 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temperature Symbol Value 40 40 150 -55 ...+150 Unit V mA °C VR IF Tj Tstg Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 650 ≤ 810 K/W Junction - soldering point 1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Jul-02-1998 1998-11-01 BAT 62-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. 0.58 max. 10 1 Unit IR VF - µA V VR = 40 V Forward voltage I F = 2 mA AC characteristics Diode capacitance CT CC R0 Ls - 0.35 0.09 225 0.6 0.6 - pF VR = 1 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-02-1998 1998-11-01 BAT 62-02W Forward current IF = f (TA*;TS) * Package mounted on epoxy 50 mA IF TA 30 TS 20 10 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 1 K/W RthJS IFmax / IFDC 10 2 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0...