Document
RBV2500 - RBV2510
PRV : 50 - 1000 Volts Io : 25 Amperes
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation
SILICON BRIDGE RECTIFIERS
RBV25
3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3
+
13.5 ± 0.3
~ ~
11 ± 0.2
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
1.0 ± 0.1
10 7.5 7.5 ±0.2 ±0.2 ±0.2
2.0 ± 0.2 0.7 ± 0.1
Dimensions in millimeters
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at I F = 12.5 Amps. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range
Notes :
SYMBOL VRRM V RMS V DC IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG
2
RBV 2500 50 35 50
RBV 2501 100 70 100
RBV 2502 200 140 200
RBV 2504 400 280 400 25 300 375 1.1 10 200 1.45
RBV 2506 600 420 600
RBV 2508 800 560 800
17.5 ± 0.5
RBV 2510 1000
UNIT
Volts 700 Volts 1000 Volts Amps. Amps. A2S Volts µA µA °C/W °C °C
- 40 to + 150 - 40 to + 150
1. Thermal resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
UPDATE : NOVEMBER 1,1998
RATING AND CHARACTERISTIC CURVES ( RBV2500 - RBV2510 )
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
30
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
300
25
PEAK FORWARD SURGE CURRENT, AMPERES
250
20
200
TJ = 50 ° C
15
150
10 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate
100
5
50
8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
0
0
25
50
75
100
125
150
175
0 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10
TJ = 100 ° C
FORWARD CURRENT, AMPERES
REVERSE CURRENT, MICROAMPERES
10
1.0
Pulse Width = 300 µ s 1 % Duty Cycle 1.0
0.1
TJ = 25 ° C
TJ = 25 ° C
0.1 0.01 0 20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
.