Document
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RBV2500D - RBV2510D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free
13.5 ± 0.3
RBV25
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
Φ 3.2 ± 0.1
20 ± 0.3
+ ~~
1.0 ฑ 0.1
11 ± 0.2 17.5 ± 0.5
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximaly )
10 7.5 7.5 ±0.2 ±0.2 ±0.2
2.0 ± 0.2 0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 25 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
RBV 2500D
RBV 2501D
RBV 2502D
RBV 2504D
RBV 2506D
RBV 2508D
RBV 2510D
VRRM
50 100 200 400 600 800 1000
VRMS
35
70 140 280 420 560 700
VDC
50 100 200 400 600 800 1000
IF(AV)
25
UNIT
V V V A
IFSM
400
A
I2t VF IR IR(H)
RθJC
TJ TSTG
375 1.1 10 200 1.2 - 40 to + 150 - 40 to + 150
A2S V μA μA
°C/W °C °C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
Page 1 of 2
Rev. 05 : May 6, 2013
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( RBV2500D - RBV2510D )
AVERAGE FORWARD OUTPUT CURRENT, AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
30
25
20
15
10
HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK.
5 (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
10
Pulse Width = 300 μs 1 % Duty Cycle
1.0
TJ = 25 °C 0.1
0.01 0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
REVERSE CURRENT, MICROAMPERES
PEAK FORWARD SURGE CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
300
250
200
TJ = 50 °C
150
100
8.3 ms SINGLE HALF SINE WAVE
50
JEDEC METHOD
0
1
2
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10 TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01 0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
FORWARD CURRENT, AMPERES
Page 2 of 2
Rev. 05 : May 6, 2013
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