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RBV2501D Dataheets PDF



Part Number RBV2501D
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Datasheet RBV2501D DatasheetRBV2501D Datasheet (PDF)

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV2500D - RBV2510D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free 13.5 ± 0.3 RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 20 ± 0.3 + ~~ 1.0 ฑ 0.1 .

  RBV2501D   RBV2501D



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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RBV2500D - RBV2510D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free 13.5 ± 0.3 RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 20 ± 0.3 + ~~ 1.0 ฑ 0.1 11 ± 0.2 17.5 ± 0.5 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximaly ) 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL RBV 2500D RBV 2501D RBV 2502D RBV 2504D RBV 2506D RBV 2508D RBV 2510D VRRM 50 100 200 400 600 800 1000 VRMS 35 70 140 280 420 560 700 VDC 50 100 200 400 600 800 1000 IF(AV) 25 UNIT V V V A IFSM 400 A I2t VF IR IR(H) RθJC TJ TSTG 375 1.1 10 200 1.2 - 40 to + 150 - 40 to + 150 A2S V μA μA °C/W °C °C Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate Page 1 of 2 Rev. 05 : May 6, 2013 www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( RBV2500D - RBV2510D ) AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 30 25 20 15 10 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. 5 (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 10 Pulse Width = 300 μs 1 % Duty Cycle 1.0 TJ = 25 °C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS REVERSE CURRENT, MICROAMPERES PEAK FORWARD SURGE CURRENT, AMPERES FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 250 200 TJ = 50 °C 150 100 8.3 ms SINGLE HALF SINE WAVE 50 JEDEC METHOD 0 1 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD CURRENT, AMPERES Page 2 of 2 Rev. 05 : May 6, 2013 .


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