DatasheetsPDF.com

RBV1508D Dataheets PDF



Part Number RBV1508D
Manufacturers EIC discrete Semiconductors
Logo EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Datasheet RBV1508D DatasheetRBV1508D Datasheet (PDF)

RBV1500D - RBV1510D PRV : 50 - 1000 Volts Io : 15 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~ ~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing mol.

  RBV1508D   RBV1508D


Document
RBV1500D - RBV1510D PRV : 50 - 1000 Volts Io : 15 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very good heat dissipation SILICON BRIDGE RECTIFIERS RBV25 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 20 ± 0.3 + 13.5 ± 0.3 ~ ~ 11 ± 0.2 1.0 ± 0.1 MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 10 ±0.2 7.5 7.5 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 15 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL RBV RBV RBV RBV RBV RBV RBV 1500D 1501D 1502D 1504D 1506D 1508D 1510D 50 35 50 100 70 100 200 140 200 400 280 400 15 600 420 600 800 560 800 1000 700 1000 17.5 ± 0.5 UNIT Volts Volts Volts Amps. VRRM VRMS V DC IF(AV) IFSM It VF IR IR(H) RθJC TJ TSTG 2 300 375 1.0 10 200 1.5 - 40 to + 150 - 40 to + 150 Amps. A2S Volts µA µA °C/W °C °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate. UPDATE : NOVEMBER 1,1998 RATING AND CHARACTERISTIC CURVES ( RBV1500D - RBV1510D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT AMPERES 18 HEAT-SINK MOUNTING, Tc 5" x 4" x 3" THK. (12.7cm x 12.7cm x 7.3cm) Al.-Finned plate FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 15 PEAK FORWARD SURGE CURRENT, AMPERES 250 12 200 TJ = 50 ° C 9 150 6 100 3 50 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 TJ = 100 ° C FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 1.0 Pulse Width = 300 µ s 1 % Duty Cycle 1.0 0.1 TJ = 25 ° C TJ = 25 ° C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS .


RBV1508 RBV1508D RBV1510


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)