RB715F

Schottky Barrier Diode RB715F Datasheet lApplication Low current rectification lFeatures 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. lConstruction Silicon epitaxial planar lDimensions (Unit : mm) 2.0±0.2 0.3±0.1 Eaリchーleドadとhaもs same dimension (3) 0.15±0.05 lLand size figure (Unit : mm) 1.3 0.65 1.25±0.1 2.1±0.1 0.1Min 0.9MIN. 1.6 (2) （0.65） （0.65） 1.3±0.1 (1) ROHM : UMD3 JEDEC :SOT-323 JEITA : SC-70 dot (year week factory) 0～0.1 0.7±0.1 0.9±0.1 lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φf11..5555±00..0055 UMD3 0.8MIN. lStructure cathode anode anode 0.3±0.1 1.75±0.1 8.0±0.2 3.5±0.05 2.4±0.1 2.4±0.1 5.5±0.2 0～0.1 2.25±0.1 　　　　 0 4.0±0.1 fφ00.5.5±0.00.055 1.25±0.1 lAbsolute maximum ratings (Ta= 25°C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) VRM VR 40 40 Average rectified forward current Io 30 Forward current surge p...