RB520G-30

Diodes Schottky barrier diode RB520G-30 RB520G-30 zApplications Low current rectification z Dimensions (Unit : mm) 0.6±0.05 0.13±0.03 1.0±0.05 1.4±0.05 zFeatures 1) Ultra Small mold type. (VMD2) 2) Low IR. 3) High reliability. zConstruction Silicon epitaxial planar 0.27±0.03 0.5±0.05 ROHM : VMD2 dot (year week factory) 0.5 1.2 z Land size figure (Unit : mm) 0.5 VMD2 zStructure z Taping specifications (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 0.18±0.05 1.75±0.1 0.4 3.5±0.05 8.0±0.3 0.1 2.1±0.1 1.11±0.05 0.76±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage(DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg 4±0.1 2±0.05 φ0.5 Limits 30 100 500 125 -40 to +125 Unit V mA mA ℃ ℃ 0.3 0.65±0.05 zElectrical characteristics (Ta=25°C) Param eter Sym bol Forward voltage Revers e current VF IR Min. - Typ. Max. - 0.45 - 0.5 Unit Conditions V IF=10m A µA VR=10V Rev.C 1/3 Diodes zElectrical characteristic curves (Ta=25°C) FORWARD CURRENT:IF(mA) 1000 100 10 Ta=125℃ Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 REVERSE CURRENT:IR(nA) 1000000 100000 10000 1000 100 10 1 0.1 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) RB520G-30 100 f=1MHｚ 10 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERIS...