RB495D
Diodes
Schottky barrier diode
RB495D
!Applications Low current rectification !External dimensions (Units : mm)
2...
RB495D
Diodes
Schottky barrier diode
RB495D
!Applications Low current rectification !External dimensions (Units : mm)
2.9±0.2 1.9±0.2 +0.2 −0.1 0.8±0.1
1.1
1.6
0.4
(All leads have same dimensions)
!Construction Silicon epitaxial planar
ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346
!Circuit
!Absolute maximum ratings (Ta = 25°C)
Parameter Peak reverse voltage DC reverse voltege Mean rectifying current∗1 Peak forward surge current∗2 Junction temperature Storage temperature Operating temperture
∗1 Mean output current per element : IO / 2 ∗2 60Hz for 1
Symbol VRM VR IO IFSM Tj Tstg Topr
Limits 40 25 0.4 2 125
Unit V V A A
°C °C °C
−40~+125 −30~+85
!Electrical characteristics (Ta = 25°C)
Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. − − − Max. 0.30 0.50 70 Unit V V µA IF=10mA IF=200mA VR=25V Conditions
Note) ESD sensiteve product handling required.
0.3~0.6
D3Q
!Features 1) Small surface mounting type. (SMD3) 2) Two diodes with common cathode for excellent installation efficiency. 3) High reliability.
0.95 0.95
+0.2 −0.1
2.8±0.2
0~0.1
+0.1 −0.05
+0.1 0.15 −0.06
RB495D
Diodes
!Electrical characteristic curves (Ta = 25°C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
100m
100
1
FORWARD CURRENT : IF (A)
REVERSE CURRENT : IR (A)
10m
100m
=1 2
Ta=125°C
1m
°C
5°
C
75
25 °C
Ta
10m
C
75°C
100µ
10
1m
−40 °
25°C
10µ
100µ 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
1µ 0 10
0°C
20
30
40
1 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF ...
