RB480

RB480K Diodes Shottky barrier diode RB480K !Applications Low current rectification !External dimensions (Units : mm) 2.0±0.2 0.9±0.1 0.7 0.2±0.1 0.25±0.1 0∼0.1 1pin MARK 2.0±0.2 1.3±0.1 0.65 0.65 0.25±0.1 0.9±0.1 0.7 0.1Min. 0.2±0.1 0.65 0.65 1.3±0.1 0.2±0.1 0.15±0.05 0.25±0.1 0.65 0.65 1.3±0.1 0.25±0.1 0.15±0.05 !Construction Silicon epitaxial planar ROHM: UMD4 EIAJ: SC-82 JEDEC: SOT-343 ∗There are two different markings. !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Junction temperature Storage temperature ∗60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 45 40 0.1 1 125 −40∼+125 Unit V V A A ˚C ˚C 0.1Min. 3T 3T !Features 1) Small surface mounting (UMD4) 2) Low IR. (IR=0.3µA Typ.) 3) This is a composite component and is ideal for reducing the number of components used. 4) High reliability. 1.25±0.1 0.6 0.65 0.3±0.1 1.25±0.1 1.25±0.1 2.1±0.1 2.1±0.1 0∼0.1 RB480K Diodes !Electrical characteristics (Ta=25°C) Parameter Forward voltage Symbol VF1 VF2 IR1 Reverse current IR2 Ct1 Capacitance between terminals Ct2 Min. − − − − − − Typ. − − − − 6.0 − Max. 0.45 0.60 1 5 − 25 Unit V V µA µA pF pF IF=10mA IF=100mA VR=10V VR=40V VR=10V, f=1MHz VR=0V Conditions !Electrical characteristic curves (Ta=25°C) 1 1m CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 50 FORWARD CURRENT : IF (A) 100m 25 ˚C ˚C REVERSE CURRENT : IR (A) 100µ Ta=125˚C 75 25 ˚C 5˚ C Ta =...