Document
Data Sheet
Schottky Barrier Diode
RB425D
Applications Low power rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm) 1.9
0.3~0.6
1.0MIN. 2.4
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
Construction Silicon epitaxial planer
2.9±0.2 0.4 +-00..105 Eaリchーleドaとd もhas same dimension
(3)
+0.1 0 .15 -0.06
0.95
2 .8 ±0 .2 1 .6-+00 ..12
(2)
0.95
0.95
1.9±0.2
(1)
0~ 0.1
0 .8±0 .1 1. 1±0. 2
0. 01
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59
week code
Taping specifications (Unit : mm)
4.0±0 .1
2.0±0.05
φ1 .5± 0.1 0
0.8MIN. SMD3
Structure
0.3±0.1
1.75±0.1
3.2±0.1 5.5±0.2
3.5±0.05 8.0±0.2
3.2±0.1
0~0.5
3 .2±0 .1
Absolute maximum ratings (Ta=25°C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature
(*1) Rating of per diode:Io/2
Symbol VRM VR Io IFSM Tj
Tstg
4.0±0.1
φ1.05MIN
Limits
40 40 100 1 125 40 to 125
Unit V V mA A °C °C
1.35±0.1
Electrical characteristics (Ta=25°C) Parameter
Forward voltage
Reverse current Capacitance between terminals
Symbol Min. Typ. Max. VF1 - - 0.55 VF2 - - 0.34 IR1 - - 30
Ct1 - 6 -
Unit Conditions
V IF=100mA V IF=10mA μA VR=10V pF VR=10V , f=1MHz
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B
RB425D
Data Sheet
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
100 Ta=125℃
10 Ta=75℃
1
0.1
Ta=25℃ Ta=-25℃
0.01 0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
600
REVERSE CURRENT:IR(uA)
10000 1000 100 10 1 0.1 0.01 0
Ta=125℃ Ta=75℃ Ta=25℃
Ta=-25℃
5 10 15 20 25 30
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
35
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100 f=1MHz
10
1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
470 D1
460
450
440
430
420
Ta=25℃ IF=100mA n=30pcs
AVE:439.5mV
FORWARD VOLTAGE:VF(mV)
310 D2
300
290
280
270
260
Ta=25℃ IF=10mA n=30pcs
AVE:281.5mV
REVERSE CURRENT:IR(uA)
30 25 20 15 10
5 0
Ta=25℃ VR=10V n=10pcs
AVE:2.548uA
VF DISPERSION MAP
VF DISPERSION MAP
IR DISPERSION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
10 20
9 Ta=25℃
8
f=1MHz VR=10V
15
7 n=10pcs
6 5
AVE:6.09pF 4
10
Ifsm 1cyc 8.3ms
35 2 AVE:5.50A 1
00
Ct DISPERSION MAP
IFSM DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
30
Ta=25℃
25 IF=0.5A
IR=1A
20
Irr=0.25*IR n=10pcs
15
10
5
AVE:6.20ns 0
trr DISPERSION MAP
15 Ifsm
10 8.3ms 8.3ms 1cyc
5
0
0.1 1 10 NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
PEAK SURGE FORWARD CURRENT:IFSM(A)
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
15 1000
Ifsm t
10 100
Rth(j-a) Rth(j-c)
Mounted on epoxy board
5
10
IM=1mA
IF=10mA
0
0.1 1 10 TIME:t(ms)
IFSM-t CHARACTERISTICS
100
1 0.001
1ms time 300us
0.01 0.1 1 10 100 TIME:t(s)
Rth-t CHARACTERISTICS
1000
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
PEAK SURGE FORWARD CURRENT:IFSM(A)
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.B
FORWARD POWER DI.