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RB425D Dataheets PDF



Part Number RB425D
Manufacturers Rohm
Logo Rohm
Description Schottky barrier diode
Datasheet RB425D DatasheetRB425D Datasheet (PDF)

Data Sheet Schottky Barrier Diode RB425D Applications Low power rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 0.3~0.6 1.0MIN. 2.4 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. Construction Silicon epitaxial planer 2.9±0.2 0.4 +-00..105 Eaリchーleドaとd もhas same dimension (3) +0.1 0 .15 -0.06 0.95 2 .8 ±0 .2 1 .6-+00 ..12 (2) 0.95 0.95 1.9±0.2 (1) 0~ 0.1 0 .8±0 .1 1. 1±0. 2 0. 01 ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code T.

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Data Sheet Schottky Barrier Diode RB425D Applications Low power rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 0.3~0.6 1.0MIN. 2.4 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. Construction Silicon epitaxial planer 2.9±0.2 0.4 +-00..105 Eaリchーleドaとd もhas same dimension (3) +0.1 0 .15 -0.06 0.95 2 .8 ±0 .2 1 .6-+00 ..12 (2) 0.95 0.95 1.9±0.2 (1) 0~ 0.1 0 .8±0 .1 1. 1±0. 2 0. 01 ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) 4.0±0 .1 2.0±0.05 φ1 .5± 0.1       0 0.8MIN. SMD3 Structure 0.3±0.1 1.75±0.1 3.2±0.1 5.5±0.2 3.5±0.05 8.0±0.2 3.2±0.1 0~0.5 3 .2±0 .1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode:Io/2 Symbol VRM VR Io IFSM Tj Tstg 4.0±0.1 φ1.05MIN Limits 40 40 100 1 125 40 to 125 Unit V V mA A °C °C 1.35±0.1 Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. Max. VF1 - - 0.55 VF2 - - 0.34 IR1 - - 30 Ct1 - 6 - Unit Conditions V IF=100mA V IF=10mA μA VR=10V pF VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B RB425D Data Sheet FORWARD CURRENT:IF(mA) FORWARD VOLTAGE:VF(mV) 100 Ta=125℃ 10 Ta=75℃ 1 0.1 Ta=25℃ Ta=-25℃ 0.01 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 600 REVERSE CURRENT:IR(uA) 10000 1000 100 10 1 0.1 0.01 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 35 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 f=1MHz 10 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 470 D1 460 450 440 430 420 Ta=25℃ IF=100mA n=30pcs AVE:439.5mV FORWARD VOLTAGE:VF(mV) 310 D2 300 290 280 270 260 Ta=25℃ IF=10mA n=30pcs AVE:281.5mV REVERSE CURRENT:IR(uA) 30 25 20 15 10 5 0 Ta=25℃ VR=10V n=10pcs AVE:2.548uA VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 10 20 9 Ta=25℃ 8 f=1MHz VR=10V 15 7 n=10pcs 6 5 AVE:6.09pF 4 10 Ifsm 1cyc 8.3ms 35 2 AVE:5.50A 1 00 Ct DISPERSION MAP IFSM DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 30 Ta=25℃ 25 IF=0.5A IR=1A 20 Irr=0.25*IR n=10pcs 15 10 5 AVE:6.20ns 0 trr DISPERSION MAP 15 Ifsm 10 8.3ms 8.3ms 1cyc 5 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 PEAK SURGE FORWARD CURRENT:IFSM(A) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 15 1000 Ifsm t 10 100 Rth(j-a) Rth(j-c) Mounted on epoxy board 5 10 IM=1mA IF=10mA 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 1ms time 300us 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) PEAK SURGE FORWARD CURRENT:IFSM(A) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B FORWARD POWER DI.


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