Data Sheet
Schottky Barrier Diode
RB160M-60
Applications General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1...
Data Sheet
Schottky Barrier Diode
RB160M-60
Applications General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1±0.1 0.05
Land size figure (Unit : mm) 1.2
2.6±0.1 3.5±0.2
0.85 3.05
Features 1)Small power mold type.(PMDU) 2)Low IR 3)High reliability
Construction Silicon epitaxial planar
①
0.9±0.1
ROHM : PMDU JEDEC :SOD-123
Manufacture Date
0.8±0.1
PMDU Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.25±0.05
1.75±0.1
8.0±0.2 3.71±0.1
3.5±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature
VRM VR Io IFSM Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. 180°Half sine wave
Limits
60 60 1 30 150 40 to 150
Unit V V A A C C
1.5MAX
Electrical characteristic (Ta=25°C) Parameter
Forward voltage Reverse current Capacitance between terminals
Symbol Min. Typ. Max. VF - 0.49 0.55 IR - 7.0 50 Ct - 40 -
Unit Conditions
V IF=1.0A μA VR=60V pF VR=10V , f=1MHz
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1/3
2011.04 - Rev.E
RB160M-60
Data Sheet
FORWARD CURRENT:IF(A)
FORWARD VOLTAGE:VF(mV)
1 Ta=75℃
Ta=125℃ 0.1
0.01
Ta=25℃ Ta=-25℃
0.001 0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
600
REVERSE CURRENT:IR(uA)
10000 1000 100 10 1 0.1 0.01 0
Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃
10 20 30 40 50
REVERSE V...