RB160M-30

Data Sheet Schottky barrier diode RB160M-30 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Features 1) Small power mold type. (PMDU) 2) Low IR. 3) High reliability Construction Silicon epitaxial planer ① 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 2.6±0.1 3.5±0.2 0.85 3.05 Land size figure (Unit : mm) 1.2 PMDU Structure Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1.75±0.1 8.0±0.2 3.71±0.1 3.5±0.05 1.81±0.1 4.0±0.1 φ1.0±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) VRM VR Average rectified forward current Io Forward current surge peak (60Hz / 1cyc) Junction temperature IFSM Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180° Half sine wave Limits 30 30 1 30 125 40 to 125 Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. VF1 - 0.39 0.46 VF2 - 0.43 0.48 IR1 - 3.0 20 IR2 - 9.0 50 Unit V V A A C C Unit Conditions V IF=0.5A V IF=1.0A A VR=15V A VR=30V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C RB160M-30 Electrical characteristic curves 　 Data Sheet FORWARD CURRENT:IF(A) FORWARD VOLTAGE:VF(mV) 1 Ta=75℃ Ta=125℃ 0.1 0.01 Ta=25℃ Ta=-25℃ 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 REVERSE CURRENT:IR(uA) 10000 1000 100 10 1 0.1 0.01 0 Ta=125℃ Ta=...