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RB150

EIC discrete Semiconductors

SILICON BRIDGE RECTIFIERS

ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND T...


EIC discrete Semiconductors

RB150

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Description
ELECTRONICS INDUSTRY (USA) CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RB150 - RB158 PRV : 50 - 800 Volts Io : 1.5 Amperes FEATURES : * * * * * * High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board 0.825 (20.95) 0.605 (15.36) SILICON BRIDGE RECTIFIERS RB 0.71 (18.0) 0.63 (16.0) AC + AC 0.035 (0.89) 0.028 (0.71) 0.500 (12.7) MIN. 0.16 (4.00) 0.14 (3.55) 0.276 (7.01 ) 0.236 (5.99) MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.4 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.105 (2.66) 0.085 (2.16) Dimensions in inches and ( millimeter ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc=50°C Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage per Diode at IF = 1 Amp. Maximum DC Reverse Current...




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