Document
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H0608M
68-88MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM
2 3
DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
1
4 5
TENTATIVE
1 3 4 5 RF Input (Pin) 2 Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 68-88MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
ORDERING INFORMATION: ORDER NUMBER RA30H0608M-E01 RA30H0608M-01
(Japan - packed without desiccator)
SUPPLY FORM Antistatic tray, 10 modules/tray
RA30H0608M
MITSUBISHI ELECTRIC 1/9
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H0608M
RATING 17 6 100 45 -30 to +110 -40 to +110 UNIT V V mW W °C °C
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0mW f=68-88MHz, ZG=ZL=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER
f Pout ηT 2fo ρin IGG — — Frequency Range Output Power 2
nd
CONDITIONS
MIN
68 40 30
TYP
MAX
88
UNIT
MHz W %
TENTATIVE
Total Efficiency Harmonic Input VSWR VDD=12.5V VGG=5V Pin=50mW -25 3:1 — Gate Current Stability 1 mA — — Load VSWR Tolerance VDD=10.0-15.2V, Pin=25-70mW, Pout<40W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1 No parasitic oscillation No degradation or destroy
dBc
All parameters, conditions, ratings, and limits are subject to change without notice.
RA30H0608M
MITSUBISHI ELECTRIC 2/9
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H0608M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
Now Preparing
RA30H0608M
MITSUBISHI ELECTRIC 3/9
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H0608M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
Now Preparing
RA30H0608M
MITSUBISHI ELECTRIC 4/9
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H0608M
OUTLINE DRAWING (mm)
66.0 ±0.5 3.0 ±0.3 7.25 ±0.8 60.0 ±0.5 51.5 ±0.5 2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5 1 2 3 4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1 16.5 ±1 43.5 ±1 55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5 (50.4) 2.3 ±0.3
4.0 ±0.3 (9.88)
RA30H0608M
MITSUBISHI ELECTRIC 5/9
17.0 ±0.5
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H0608M
TEST BLOCK DIAGRAM
Power Meter 1 2
DUT
3 4
5
Spectrum Analyzer
Signal Generator
Attenuator
Preamplifier
Attenuator
Directional Coupler
ZG=50Ω
ZL=50Ω
Directional Coupler
Attenuator
Power Meter
C1
C2
+ DC Power Supply VGG C1, C2: 4700pF, 22uF in parallel
+ DC Power Supply VDD
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
EQUIVALENT CIRCUIT
Now Preparing
RA30H0608M
MITSUBISHI ELECTRIC 6/9
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H0608M
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form .