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RA30H0608M Dataheets PDF



Part Number RA30H0608M
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description 30-watt RF MOSFET Amplifier Module
Datasheet RA30H0608M DatasheetRA30H0608M Datasheet (PDF)

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuate.

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) 1 4 5 TENTATIVE 1 3 4 5 RF Input (Pin) 2 Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 68-88MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER RA30H0608M-E01 RA30H0608M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 10 modules/tray RA30H0608M MITSUBISHI ELECTRIC 1/9 7 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA30H0608M RATING 17 6 100 45 -30 to +110 -40 to +110 UNIT V V mW W °C °C MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0mW f=68-88MHz, ZG=ZL=50Ω The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f Pout ηT 2fo ρin IGG — — Frequency Range Output Power 2 nd CONDITIONS MIN 68 40 30 TYP MAX 88 UNIT MHz W % TENTATIVE Total Efficiency Harmonic Input VSWR VDD=12.5V VGG=5V Pin=50mW -25 3:1 — Gate Current Stability 1 mA — — Load VSWR Tolerance VDD=10.0-15.2V, Pin=25-70mW, Pout<40W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1 No parasitic oscillation No degradation or destroy dBc All parameters, conditions, ratings, and limits are subject to change without notice. RA30H0608M MITSUBISHI ELECTRIC 2/9 7 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA30H0608M TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) Now Preparing RA30H0608M MITSUBISHI ELECTRIC 3/9 7 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA30H0608M TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) Now Preparing RA30H0608M MITSUBISHI ELECTRIC 4/9 7 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA30H0608M OUTLINE DRAWING (mm) 66.0 ±0.5 3.0 ±0.3 7.25 ±0.8 60.0 ±0.5 51.5 ±0.5 2-R2 ±0.5 21.0 ±0.5 9.5 ±0.5 5 1 2 3 4 14.0 ±1 2.0 ±0.5 Ø0.45 ±0.15 12.0 ±1 16.5 ±1 43.5 ±1 55.5 ±1 3.1 +0.6/-0.4 0.09 ±0.02 7.5 ±0.5 (50.4) 2.3 ±0.3 4.0 ±0.3 (9.88) RA30H0608M MITSUBISHI ELECTRIC 5/9 17.0 ±0.5 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) 7 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA30H0608M TEST BLOCK DIAGRAM Power Meter 1 2 DUT 3 4 5 Spectrum Analyzer Signal Generator Attenuator Preamplifier Attenuator Directional Coupler ZG=50Ω ZL=50Ω Directional Coupler Attenuator Power Meter C1 C2 + DC Power Supply VGG C1, C2: 4700pF, 22uF in parallel + DC Power Supply VDD 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT Now Preparing RA30H0608M MITSUBISHI ELECTRIC 6/9 7 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA30H0608M PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form .


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