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R2658 Dataheets PDF



Part Number R2658
Manufacturers Hamamatsu Corporation
Logo Hamamatsu Corporation
Description PHOTOMULTIPLIER TUBES
Datasheet R2658 DatasheetR2658 Datasheet (PDF)

PHOTOMULTIPLIER TUBES R2658 R2658P (For Photon Counting) High QE in Near IR Region Due to InGaAs (Cs) Photocathode For Spectrophotometers with 185 to 1010 nm range, Fluorescence and Laser Applications and Photon Counting (R2658P) in the Near Infrared Region, etc. FEATURES High QE in Near IR Region . QE 0.13% at 1 µ m Wide Wavelength Range .... 185 to 1010 nm Low Dark Current .. 1 nA at 1250 .

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PHOTOMULTIPLIER TUBES R2658 R2658P (For Photon Counting) High QE in Near IR Region Due to InGaAs (Cs) Photocathode For Spectrophotometers with 185 to 1010 nm range, Fluorescence and Laser Applications and Photon Counting (R2658P) in the Near Infrared Region, etc. FEATURES High QE in Near IR Region ............................... QE 0.13% at 1 µ m Wide Wavelength Range ....................................... 185 to 1010 nm Low Dark Current .......................................... 1 nA at 1250 V (Typ.) The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter side-on photomultiplier tubes using a newly developed InGaAs semiconductor photocathode. The InGaAs photocathode is sensitive from UV to near IR radiations (as long as over 1010 nm) longer than wavelength limit of GaAs photocathode, and yet offers low dark current. The dark current is 2 orders lower than the commercial S-1 photocathode. Therefore, they are well suited for low light detection in the near IR region including fluorescence lifetime measurements. Time response, gain, and dimensions are identical with the conventional 28 mm (1-1/8 inch) diameter side-on tubes with a GaAs photocathode. The R2658P is a photon counting version of the R2658 with low dark counts. GENERAL Parameter Spectral Response Wavelength of Maximum Response Photocathode Material Minimum Effective Area Secondary Emitting Surface Dynode Direct Interelectrode Capacitances Figure 1: Typical Spectral Response Description/Value Unit 185 to 1010 400 InGaAs (Cs) 3 × 12 UV glass Cu-BeO Circular-cage 9 Approx. 4 Approx. 6 11-pin base JEDEC No. B11-88 Approx. 45 E678-11A E717-63 nm — mm — — — — pF pF — g — — 0.01 100 200 300 400 500 600 700 800 900 1000 1100 TPMSB0150EA 100 CATHODE RADIANT SENSITIVITY CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) nm 10 Window Material Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes QUANTUM EFFICIENCY 1 Base Weight Suitable Socket (Option) Suitable Socket Assembly (Option) 0.1 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2000 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R2658, R2658P MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Value 1500 250 1 -80 to +50 Unit Vdc Vdc µA °C NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: Red/white ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Average Anode Current A Ambient Temperature CHARACTERISTICS (at 25°C) Parameter Quantum at 330 nm Efficiency at 1000 nm Luminous Cathode Sensitivity Radiant B Min. — 0.02 50 — — — — — 0.16 0.25 5 — — — — — — — — — — — — — — Typ. 14 0.13 100 20 23 40 19 7.6 1 0.4 16 3.2 × 3.7 × 6.4 × 3.0 × 1.2 × 1.6 × 1 50 1.1 × 10-15 2.0 20 2 2 103 103 103 103 103 105 Max. — — — — — — — — — — — — — — — — — — 10 300 — — — — — Unit % % µA/lm mA/W mA/W mA/W mA/W mA/W mA/W — A/lm A/W A/W A/W A/W A/W A/W — nA s-1(cps) W ns ns % % E: Measured with the same supply voltage and the voltage distribution ratio as Note D after 30 minute storage in the darkness. F: Measured at the voltage producing the gain of 1 × 106 and the voltage distribution ratio shown in table 1 below. The photocathode is cooled at -20 °C. G: ENI is an indication of the photo-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = 2q•ldb•G•∆f S at 194 nm at 254 nm at 400 nm at 633 nm at 852 nm at 1000 nm Red/White Ratio C Luminous D at 194 nm Anode Sensitivity at 254 nm Radiant at 400 nm at 633 nm at 852 nm at 1000 nm Gain D where q = Electronic charge (1.60 × 10-19 coulomb) ldb = Anode dark current (after 30 minute storage) in amperes G = Gain ∆f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the .


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