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SM341

Polyfet RF Devices
Part Number SM341
Manufacturer Polyfet RF Devices
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published Apr 16, 2005
Detailed Description polyfet rf devices SM341 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet PDF File SM341 PDF File

SM341
SM341

Overview
polyfet rf devices SM341 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.
0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 300 Watts Junction to Case Thermal Resistance o 0.
55 C/W Maximum Junction Temperature o...


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