SM2JZ47A

www.datasheet4u.com SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A AC POWER CONTROL APPLICATIONS l IT (RMS) = 1A (Ta = 65°C without radiator) l Gate Trigger Current l R.M.S On−State Current l Isolation Voltage : IGT = 5mA Max. (TYPE “A”) : IT (RMS) = 2A (Tc = 110°C) : VISOL = 1500V (AC, t = 60s) l Repetitive Peak Off−State Voltage : VDRM = 400V, 600V Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage R.M.S On−State Current (Full Sine Waveform) SM2GZ47 SM2GZ47A SM2JZ47 SM2JZ47A Tc = 110°C Ta = 65°C SYMBOL RATING 400 VDRM 600 IT (RMS) 2 1 8 (50Hz) 8.8 (60Hz) 0.32 3 0.3 10 1.6 −40~125 −40~125 1500 A V UNIT Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 2 ITSM I t PGM PG (AV) VFGM IGM Tj Tstg VISOL 2 A A s W W V A °C °C V 2 JEDEC ― JEITA ― TOSHIBA 13−10H1A Weight: 1.7g (Typ.) MARKING NUMBER *1 *2 SYMBOL SM2GZ47, SM2GZ47A TYPE SM2JZ47, SM2JZ47A SM2GZ47A, SM2JZ47A MARK M2GZ47 M2JZ47 A *3 Example 8A : January 1998 8B : February 1998 8L : December 1998 1 2001-07-10 www.datasheet4u.com SM2GZ47,SM2GZ47A,SM2JZ47,SM2JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I...