BI?DIRECTIONAL TRIODE THYRISTOR
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ47,SM16JZ47,SM16...
Description
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S On−State Current
: IT (RMS) = 16A
l High Commutating (dv / dt)
l Isolation Voltage
: VISOL = 1500V AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak Off−State Voltage
SM16GZ47 SM16GZ47A
SM16JZ47 SM16JZ47A
R.M.S On−State Current (Full Sine Waveform Tc = 73°C)
Peak One Cycle Surge On−State Current (Non−Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
SYMBOL
VDRM
IT (RMS)
ITSM I2t
di / dt PGM PG (AV) VGM IGM
Tj Tstg VISOL
RATING
400
600
16 150 (50Hz) 165 (60Hz)
112.5 50 5 0.5 10 2
−40~125 −40~125
1500
UNIT
V
A
A A2s A / µs W W V A °C °C V
JEDEC JEITA TOSHIBA Weight: 1.7g
― ― 13−10H1A
Note 1:
di / dt Test condition
VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0
1
2001-07-13
SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
II Gate Trigger Voltage
III
IV
I
SM16GZ47
II
SM16JZ47
III
Gate Trigger
IV
Current
I
SM16GZ47A
II
SM16JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding ...
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