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SLD301V

Sony Corporation

100mW High Power Laser Diode

SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCV...


Sony Corporation

SLD301V

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Description
SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features High power Recommended power output Low operating current Applications Solid state laser excitation Medical use Structure GaAlAs double-hetero-type laser diode Absolute Maximum Ratings (Tc = 25°C) Optical power output Po 100 Reverse voltage VR LD 2 PD 15 Operating temperature Topr –10 to +50 Storage temperature Tstg –40 to +85 Pin Configuration Po = 90mW mW V V °C °C 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E88057F81-PS SLD301V Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength∗1 Monitor current Radiation angle (F. W. H. M.∗) Positional accuracy Differential efficiency Perpendicular Parallel Position Angle Symbol Ith Iop Vop λp Imon θ⊥ θ// ∆X, ∆Y ∆φ⊥ ηD PO = 90mW PO = 90mW PO = 90mW PO = 90mW VR = 10V PO = 90mW 770 Conditions Min. (Tc: Case temperature, Tc = 25°C) Typ. 150 250 1.9 Max. 200 400 3.0 840 0.15 28 12 PO = 90...




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